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Revision 1.23 - (show annotations)
Tue Jul 29 13:51:57 2014 UTC (10 years, 4 months ago) by ccflib
Branch: MAIN
CVS Tags: version_1_16, HEAD
Changes since 1.22: +6 -0 lines
Committed through make

1 ChangeLog for emos-quantumeff
2 ============================
3 VERSION 1.16 - 2014-07-29 (RDS)
4 -----------
5 Issue 0020 and 0021
6 Tweak of TOTAL_QE at silicon edge. It is now time-dependent
7 and hence two epoch files are needed per camera.
8
9 VERSION 1.15 - 2013-11-11 (RDS)
10 -----------
11 Issue 0019
12 New calibration at low energies
13
14 VERSION 1.14 - 2009-09-01 (RDS)
15 -----------
16 Issue 0018
17 New calibration around the Oxygen edge for both cameras.
18 New files are: mos1_qe_v25_ccd1.dat, mos2_qe_v25_ccd1.dat
19
20 VERSION 1.13 - 2007-05-31 (RDS)
21 -----------
22 Issue 0017
23 New calibration based on contamination model designed to
24 reduce the discrepancy between MOS and PN at the Oxygen edge
25
26 VERSION 1.12 - 2004-04-20 (RDS)
27 -----------
28 Issue 0016
29 Produced from a new calibration of MOS chips used on the
30 SWIFT project. The changes affect the QE_TOTAL array of
31 both cameras below 1 keV.
32
33 VERSION 1.11 - 2003-06-03 (RDS)
34 -----------
35 Issue 0015
36 Uses realistic channel space pattern fractions for Timing
37 mode (SPR-2422)
38 Includes key-words to describe the ratio of large pattern
39 events (SPR-2421)
40
41 VERSION 1.10 - 2002-12-16 (RDS)
42 -----------
43 Issue 0014
44 Set the pattern fractions in channel space more accurately so
45 that they can be used within epatplot
46
47 VERSION 1.9 - 2002-11-22 (RDS)
48 -----------
49 Issue 0013
50 Add in pattern fractions for timing and burst modes
51 Add in a CHBINS_FRACTION extension
52
53 VERSION 1.8 - 2002-06-28 (RDS)
54 -----------
55 Iss 0012
56 Return to the values in Version 1.6 which are now further
57 substantiated by work by Philippe Marty.
58
59 VERSION 1.7 - 2002-03-27 (DHL)
60 -----------
61 Iss 0011
62 Seems like that SAS v 5.3 won't go out with the required
63 vignetting
64 corrections so we need a quick fudge to get the MOS2 and MOS1 QE's
65 back into an alignment that temporarily gives reasonable results,
66 while not maintaining the old Leicester QE's with known
67 deficiencies. MOS2 only changed..
68
69 VERSION 1.6 - 2002-03-07 (DHL)
70 -----------
71 Iss 0011
72 Made an error in adding up only patterns 0:12 into the QE_TOT
73 extensions
74 So this version should now have patterns 0:31
75
76 VERSION 1.5 - 2002-03-01 (DHL)
77 -----------
78 Iss 0011
79 Fixed the data for the QE, by making the high energy (>1.5keV) points
80 match a detection depth provided on a CCD-CCD case from the Orsay data
81 (see below). At lower energies I just take the existing sets from the
82 Leicester response matrices (q20 versions) and merge into the higher
83 energy data. I note that we are matching a response of 0-12 patterns
84 only, so we do not truly expect the curve to fit a simple Si depth
85 -due to effect of energy thresholds and event splitting, but the Orsay
86 data are a pretty good match. On echange i made was to get a good fit
87 just below the Si K edge & there is put in a depth of 32um for ALL
88 chips
89
90 Values used were: MOS1, CCD 1-7 25.8,29.6,28.8,25.3,28.4,28.2,27.8
91 MOS2, CCD 1-7 28.0,27.4,26.8,28.8,28.8,26.4,28.2
92 Note that in MOS2 CCDS4&5 were never measured on ground so I took an
93 average value based on other CCDS from the same manufactured batch
94
95 VERSION 1.4 - 2002-01-30 (RDS)
96 -----------
97 Iss 0010
98
99 Add in extra units and remove quotes from region string
100
101 VERSION 1.3 - 2002-01-24 (RDS)
102 -----------
103 Iss 0010
104
105 Add in extra pattern fraction tables (SCR-72)
106
107 VERSION 1.2 - 2002-01-08 (DL)
108 -----------
109 Iss 0009
110
111 To fix SPR2178 I changed the region descriptor from POLYGON type to
112 BOX type. This not only clears up ambiguity on the borders of the shape
113 but probably speeds up the calculation.
114
115 VERSION 1.1 - 2001-09-20 (DL)
116 -----------
117 Iss 0008
118
119 Updated for version 5.2 of SAS. We realise that there was a double
120 accounting of the pattern fractions so that at 10keV (for exampel)
121 the 50% fraction of 0-12 patterns was doubly applied. This led to
122 a gradually decreasing QE with Energy compared with the true expected
123 QE
124
125 VERSION 1.0 - 2001-07-19 (DL)
126 -----------
127 Updated for version 5.1 of SAS to make the SAS arfgen reproduce
128 consistent data with the LUX-supplied response matrices.
129 Addedd additional energy anchor points at 0eV and 30keV to aid
130 interpolation.
131 High energy points are scaled according to a silicon absorption depth
132 which was measured at Orsay - now we have a good cross-match to CCD
133 fabrication batch which allows an estimate even for thoise CCDS which
134 were never measured at Orsay.
135 VERSION 0.6 - 2000-09-6 (DL)
136 -----------
137 Further analysis of fligh tdata at Licester allowed better
138 reconciliation with the analytical QE models. In addition we
139 introduce far more energy data to allow for better interpolation. There
140 are still problems around the O edge and below 300eV, so we need to
141 understand modifications in RMF to make progress at this point.
142
143 VERSION 0.5 - 2000-06-23 (DL)
144 -----------
145 The initial flight calibration revealed discrepancies at the O edge
146 and the lowest energy reponses. These were attributed mainly to
147 systematic errors in the monitoring process at the Orsay synchrotron.
148 New empirical fits to the data were provided by Leicester, and these
149 have been compared with new SCISIM runs, utilising the best latest
150 electrode structure used in the Leicester analystical QE model fit. A
151 combination of LUX data, and an extension BELOW the Si L edge for the
152 SCISIM data allows a hopefully better fit. In addition I have modified
153 the QE's for the outer CCDs of each camera, where there are systematic
154 differences in QE at > 5keV. These can be attributed to ddifferences
155 in silicon resistivity translating to different depletion depths. The
156 QE data for this at Orsay is equivocal, so I take average trends in
157 increased efficiency between 5 and 12keV and allocate a best estimate
158 of increased depletion depth to this, and in return modify the overall
159 QE curves as a result. I am suspicious, though that all QE's are
160 GREATER tahn the central CCD, and this may indicate a systematic bias
161 in the measurment method at Orsay.
162
163 The new data sets should give good results to about 10% accuracy at
164 worst case small energy scales (eg EXAFS scales at silicon edges etc.)
165
166 VERSION 0.4 - 2000-05-23 (DL)
167 -----------
168 FIxed error of missing pattern 1 data for CCD5
169 VERSION 0.3 - 2000-02-23 (DL)
170 -----------
171 FIxed numerical problem in the data files (some values >>1 )
172
173 Version 0.2 - 2000-02-17 (UL)
174 -----------
175 + fixed minor problem with REGION expression in data files
176
177 Version 0.1 - 2000-02-09 (DL)
178 -----------
179 + created by DL

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