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dlumb |
1.6 |
ChangeLog for emos-quantumeff |
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dlumb |
1.9 |
VERSION 1.2 - 2002-01-08 (DL) |
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Iss 0009 |
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To fix SPR2178 I changed the region descriptor from POLYGON type to |
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BOX type. This not only clears up ambiguity on the borders of the shape |
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but probably speeds up the calculation. |
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dlumb |
1.8 |
VERSION 1.1 - 2001-09-20 (DL) |
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Iss 0008 |
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Updated for version 5.2 of SAS. We realise that there was a double |
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accounting of the pattern fractions so that at 10keV (for exampel) |
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the 50% fraction of 0-12 patterns was doubly applied. This led to |
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a gradually decreasing QE with Energy compared with the true expected |
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QE |
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dlumb |
1.7 |
VERSION 1.0 - 2001-07-19 (DL) |
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Updated for version 5.1 of SAS to make the SAS arfgen reproduce |
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consistent data with the LUX-supplied response matrices. |
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Addedd additional energy anchor points at 0eV and 30keV to aid |
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interpolation. |
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High energy points are scaled according to a silicon absorption depth |
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which was measured at Orsay - now we have a good cross-match to CCD |
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fabrication batch which allows an estimate even for thoise CCDS which |
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were never measured at Orsay. |
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dlumb |
1.6 |
VERSION 0.6 - 2000-09-6 (DL) |
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Further analysis of fligh tdata at Licester allowed better |
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reconciliation with the analytical QE models. In addition we |
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introduce far more energy data to allow for better interpolation. There |
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are still problems around the O edge and below 300eV, so we need to |
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understand modifications in RMF to make progress at this point. |
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dlumb |
1.5 |
VERSION 0.5 - 2000-06-23 (DL) |
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The initial flight calibration revealed discrepancies at the O edge |
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and the lowest energy reponses. These were attributed mainly to |
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systematic errors in the monitoring process at the Orsay synchrotron. |
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New empirical fits to the data were provided by Leicester, and these |
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have been compared with new SCISIM runs, utilising the best latest |
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electrode structure used in the Leicester analystical QE model fit. A |
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combination of LUX data, and an extension BELOW the Si L edge for the |
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SCISIM data allows a hopefully better fit. In addition I have modified |
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the QE's for the outer CCDs of each camera, where there are systematic |
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differences in QE at > 5keV. These can be attributed to ddifferences |
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in silicon resistivity translating to different depletion depths. The |
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QE data for this at Orsay is equivocal, so I take average trends in |
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increased efficiency between 5 and 12keV and allocate a best estimate |
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of increased depletion depth to this, and in return modify the overall |
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QE curves as a result. I am suspicious, though that all QE's are |
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GREATER tahn the central CCD, and this may indicate a systematic bias |
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in the measurment method at Orsay. |
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The new data sets should give good results to about 10% accuracy at |
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worst case small energy scales (eg EXAFS scales at silicon edges etc.) |
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dlumb |
1.4 |
VERSION 0.4 - 2000-05-23 (DL) |
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FIxed error of missing pattern 1 data for CCD5 |
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dlumb |
1.3 |
VERSION 0.3 - 2000-02-23 (DL) |
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FIxed numerical problem in the data files (some values >>1 ) |
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ulammers |
1.2 |
Version 0.2 - 2000-02-17 (UL) |
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+ fixed minor problem with REGION expression in data files |
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ulammers |
1.1 |
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ulammers |
1.2 |
Version 0.1 - 2000-02-09 (DL) |
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ulammers |
1.1 |
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+ created by DL |