/[CCFs]/ccfdev/packages/emos-quantumef/ChangeLog
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Revision 1.7 - (hide annotations)
Thu Jul 19 07:43:40 2001 UTC (23 years, 4 months ago) by dlumb
Branch: MAIN
CVS Tags: version_1_0
Changes since 1.6: +10 -0 lines
Committed through make

1 dlumb 1.6 ChangeLog for emos-quantumeff
2     ============================
3 dlumb 1.7 VERSION 1.0 - 2001-07-19 (DL)
4     -----------
5     Updated for version 5.1 of SAS to make the SAS arfgen reproduce
6     consistent data with the LUX-supplied response matrices.
7     Addedd additional energy anchor points at 0eV and 30keV to aid
8     interpolation.
9     High energy points are scaled according to a silicon absorption depth
10     which was measured at Orsay - now we have a good cross-match to CCD
11     fabrication batch which allows an estimate even for thoise CCDS which
12     were never measured at Orsay.
13 dlumb 1.6 VERSION 0.6 - 2000-09-6 (DL)
14     -----------
15     Further analysis of fligh tdata at Licester allowed better
16     reconciliation with the analytical QE models. In addition we
17     introduce far more energy data to allow for better interpolation. There
18     are still problems around the O edge and below 300eV, so we need to
19     understand modifications in RMF to make progress at this point.
20    
21 dlumb 1.5 VERSION 0.5 - 2000-06-23 (DL)
22     -----------
23     The initial flight calibration revealed discrepancies at the O edge
24     and the lowest energy reponses. These were attributed mainly to
25     systematic errors in the monitoring process at the Orsay synchrotron.
26     New empirical fits to the data were provided by Leicester, and these
27     have been compared with new SCISIM runs, utilising the best latest
28     electrode structure used in the Leicester analystical QE model fit. A
29     combination of LUX data, and an extension BELOW the Si L edge for the
30     SCISIM data allows a hopefully better fit. In addition I have modified
31     the QE's for the outer CCDs of each camera, where there are systematic
32     differences in QE at > 5keV. These can be attributed to ddifferences
33     in silicon resistivity translating to different depletion depths. The
34     QE data for this at Orsay is equivocal, so I take average trends in
35     increased efficiency between 5 and 12keV and allocate a best estimate
36     of increased depletion depth to this, and in return modify the overall
37     QE curves as a result. I am suspicious, though that all QE's are
38     GREATER tahn the central CCD, and this may indicate a systematic bias
39     in the measurment method at Orsay.
40    
41     The new data sets should give good results to about 10% accuracy at
42     worst case small energy scales (eg EXAFS scales at silicon edges etc.)
43    
44 dlumb 1.4 VERSION 0.4 - 2000-05-23 (DL)
45     -----------
46     FIxed error of missing pattern 1 data for CCD5
47 dlumb 1.3 VERSION 0.3 - 2000-02-23 (DL)
48     -----------
49     FIxed numerical problem in the data files (some values >>1 )
50    
51 ulammers 1.2 Version 0.2 - 2000-02-17 (UL)
52     -----------
53     + fixed minor problem with REGION expression in data files
54 ulammers 1.1
55 ulammers 1.2 Version 0.1 - 2000-02-09 (DL)
56 ulammers 1.1 -----------
57     + created by DL

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