Annotation of /ccfdev/packages/emos-quantumef/ChangeLog

ChangeLog for emos-quantumeff
============================
VERSION 1.5 - 2002-03-01 (DHL)
-----------             
        Iss 0011
        Fixed the data for the QE, by making the high energy (>1.5keV) points
        match a detection depth provided on a CCD-CCD case from the Orsay data
        (see below). At lower energies I just take the existing sets from the
        Leicester response matrices (q20 versions) and merge into the higher
        energy data. I note that we are matching a response of 0-12 patterns
        only, so we do not truly expect the curve to fit a simple Si depth
        -due to effect of energy thresholds and event splitting, but the Orsay 
        data are a pretty good match. On echange i made was to get a good fit 
        just below the Si K edge & there is put in a depth of 32um for ALL 
        chips

        Values used were: MOS1, CCD 1-7  25.8,29.6,28.8,25.3,28.4,28.2,27.8
                          MOS2, CCD 1-7  28.0,27.4,26.8,28.8,28.8,26.4,28.2
        Note that in MOS2 CCDS4&5 were never measured on ground so I took an 
        average value based on other CCDS from the same manufactured batch
        
VERSION 1.4 - 2002-01-30 (RDS)
-----------             
        Iss 0010     

        Add in extra units and remove quotes from region string

VERSION 1.3 - 2002-01-24 (RDS)
-----------             
        Iss 0010

        Add in extra pattern fraction tables (SCR-72)

VERSION 1.2 - 2002-01-08 (DL)
-----------             
        Iss 0009

        To fix SPR2178 I changed the region descriptor from POLYGON type to
        BOX type. This not only clears up ambiguity on the borders of the shape
        but probably speeds up the calculation.
        
VERSION 1.1 - 2001-09-20 (DL)
-----------             
        Iss 0008

        Updated for version 5.2 of SAS. We realise that there was a double
        accounting of the pattern fractions so that at 10keV (for exampel)
        the 50% fraction of 0-12 patterns was doubly applied. This led to
        a gradually decreasing QE with Energy compared with the true expected
        QE
        
VERSION 1.0 - 2001-07-19 (DL)
-----------     
        Updated for version 5.1 of SAS to make the SAS arfgen reproduce 
        consistent data with the LUX-supplied response matrices.
        Addedd additional energy anchor points at 0eV and 30keV to aid
        interpolation.
        High energy points are scaled according to a silicon absorption depth
        which was measured at Orsay - now we have a good cross-match to CCD 
        fabrication batch which allows an estimate even for thoise CCDS which 
        were never measured at Orsay.
VERSION 0.6 - 2000-09-6 (DL)
-----------
        Further analysis of fligh tdata at Licester allowed better 
        reconciliation with the analytical QE models. In addition we 
        introduce far more energy data to allow for better interpolation. There
        are still problems around the O edge and below 300eV, so we need to
        understand modifications in RMF to make progress at this point.
        
VERSION 0.5 - 2000-06-23 (DL)
-----------
        The initial flight calibration revealed discrepancies at the O edge
        and the lowest energy reponses. These were attributed mainly to 
        systematic  errors in the monitoring process at the Orsay synchrotron.
        New empirical fits to the data were provided by Leicester, and these 
        have been compared with new SCISIM runs, utilising the best latest 
        electrode structure used in the Leicester analystical QE model fit. A 
        combination of LUX data, and an extension BELOW the Si L edge for the 
        SCISIM data allows a hopefully better fit. In addition I have modified
        the QE's for the outer CCDs of each camera, where there are systematic
        differences in QE at > 5keV. These can be attributed to ddifferences
        in silicon resistivity translating to different depletion depths. The 
        QE data for this at Orsay is equivocal, so I take average trends in
        increased efficiency between 5 and 12keV and allocate a best estimate 
        of increased depletion depth to this, and in return modify the overall
        QE curves as a result. I am suspicious, though that all QE's are 
        GREATER tahn the central CCD, and this may indicate a systematic bias
        in the measurment method at Orsay.

        The new data sets should give good results to about 10% accuracy at 
        worst case small energy scales (eg EXAFS scales at silicon edges etc.)
        
VERSION 0.4 - 2000-05-23 (DL)
-----------
        FIxed error of missing pattern 1 data for CCD5
VERSION 0.3 - 2000-02-23 (DL)
-----------
        FIxed numerical problem in the data files (some values >>1 )
        
Version 0.2 - 2000-02-17 (UL)
-----------
        + fixed minor problem with REGION expression in data files

Version 0.1 - 2000-02-09 (DL)
-----------
        + created by DL
1	dlumb	1.6	ChangeLog for emos-quantumeff
2			============================
3	dlumb	1.12	VERSION 1.5 - 2002-03-01 (DHL)
4			-----------
5			Iss 0011
6			Fixed the data for the QE, by making the high energy (>1.5keV) points
7			match a detection depth provided on a CCD-CCD case from the Orsay data
8			(see below). At lower energies I just take the existing sets from the
9			Leicester response matrices (q20 versions) and merge into the higher
10			energy data. I note that we are matching a response of 0-12 patterns
11			only, so we do not truly expect the curve to fit a simple Si depth
12			-due to effect of energy thresholds and event splitting, but the Orsay
13			data are a pretty good match. On echange i made was to get a good fit
14			just below the Si K edge & there is put in a depth of 32um for ALL
15			chips
16
17			Values used were: MOS1, CCD 1-7 25.8,29.6,28.8,25.3,28.4,28.2,27.8
18			MOS2, CCD 1-7 28.0,27.4,26.8,28.8,28.8,26.4,28.2
19			Note that in MOS2 CCDS4&5 were never measured on ground so I took an
20			average value based on other CCDS from the same manufactured batch
21
22	rsaxton	1.11	VERSION 1.4 - 2002-01-30 (RDS)
23			-----------
24			Iss 0010
25
26			Add in extra units and remove quotes from region string
27
28	rsaxton	1.10	VERSION 1.3 - 2002-01-24 (RDS)
29			-----------
30			Iss 0010
31
32			Add in extra pattern fraction tables (SCR-72)
33
34	dlumb	1.9	VERSION 1.2 - 2002-01-08 (DL)
35			-----------
36			Iss 0009
37
38			To fix SPR2178 I changed the region descriptor from POLYGON type to
39			BOX type. This not only clears up ambiguity on the borders of the shape
40			but probably speeds up the calculation.
41
42	dlumb	1.8	VERSION 1.1 - 2001-09-20 (DL)
43			-----------
44			Iss 0008
45
46			Updated for version 5.2 of SAS. We realise that there was a double
47			accounting of the pattern fractions so that at 10keV (for exampel)
48			the 50% fraction of 0-12 patterns was doubly applied. This led to
49			a gradually decreasing QE with Energy compared with the true expected
50			QE
51
52	dlumb	1.7	VERSION 1.0 - 2001-07-19 (DL)
53			-----------
54			Updated for version 5.1 of SAS to make the SAS arfgen reproduce
55			consistent data with the LUX-supplied response matrices.
56			Addedd additional energy anchor points at 0eV and 30keV to aid
57			interpolation.
58			High energy points are scaled according to a silicon absorption depth
59			which was measured at Orsay - now we have a good cross-match to CCD
60			fabrication batch which allows an estimate even for thoise CCDS which
61			were never measured at Orsay.
62	dlumb	1.6	VERSION 0.6 - 2000-09-6 (DL)
63			-----------
64			Further analysis of fligh tdata at Licester allowed better
65			reconciliation with the analytical QE models. In addition we
66			introduce far more energy data to allow for better interpolation. There
67			are still problems around the O edge and below 300eV, so we need to
68			understand modifications in RMF to make progress at this point.
69
70	dlumb	1.5	VERSION 0.5 - 2000-06-23 (DL)
71			-----------
72			The initial flight calibration revealed discrepancies at the O edge
73			and the lowest energy reponses. These were attributed mainly to
74			systematic errors in the monitoring process at the Orsay synchrotron.
75			New empirical fits to the data were provided by Leicester, and these
76			have been compared with new SCISIM runs, utilising the best latest
77			electrode structure used in the Leicester analystical QE model fit. A
78			combination of LUX data, and an extension BELOW the Si L edge for the
79			SCISIM data allows a hopefully better fit. In addition I have modified
80			the QE's for the outer CCDs of each camera, where there are systematic
81			differences in QE at > 5keV. These can be attributed to ddifferences
82			in silicon resistivity translating to different depletion depths. The
83			QE data for this at Orsay is equivocal, so I take average trends in
84			increased efficiency between 5 and 12keV and allocate a best estimate
85			of increased depletion depth to this, and in return modify the overall
86			QE curves as a result. I am suspicious, though that all QE's are
87			GREATER tahn the central CCD, and this may indicate a systematic bias
88			in the measurment method at Orsay.
89
90			The new data sets should give good results to about 10% accuracy at
91			worst case small energy scales (eg EXAFS scales at silicon edges etc.)
92
93	dlumb	1.4	VERSION 0.4 - 2000-05-23 (DL)
94			-----------
95			FIxed error of missing pattern 1 data for CCD5
96	dlumb	1.3	VERSION 0.3 - 2000-02-23 (DL)
97			-----------
98			FIxed numerical problem in the data files (some values >>1 )
99
100	ulammers	1.2	Version 0.2 - 2000-02-17 (UL)
101			-----------
102			+ fixed minor problem with REGION expression in data files
103	ulammers	1.1
104	ulammers	1.2	Version 0.1 - 2000-02-09 (DL)
105	ulammers	1.1	-----------
106			+ created by DL